1/ f -Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation

1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation

Shizunori MATSUMOTO, Hiroaki UENO, Satoshi HOSOKAWA, Toshihiko KITAMURA, Mitiko MIURA- MATTAUSCH, Hans Jurgen MATTAUSCH, Tatsuya OHGURO, Shigetaka KUMASHIRO, Tetsuya YAMAGUCHI, Kyoji YAMASHITA, Noriaki NAKAYAMA

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IEICE Transactions on Electronics

1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation

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