A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential

A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential

Dondee NAVARRO, Takeshi MIZOGUCHI, Masami SUETAKE, Kazuya HISAMITSU, Hiroaki UENO, Mitiko MIURA- MATTAUSCH, Hans Jurgen MATTAUSCH, Shigetaka KUMASHIRO, Tetsuya YAMAGUCHI, Kyoji YAMASHITA, Noriaki NAKAYAMA

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IEICE Transactions on Electronics

A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential

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