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A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology

Hideaki KURATA, Satoshi NODA, Yoshitaka SASAGO, Kazuo OTSUGA, Tsuyoshi ARIGANE, Tetsufumi KAWAMURA, Takashi KOBAYASHI, Hitoshi KUME, Kazuki HOMMA, Teruhiko ITO, Yoshinori SAKAMOTO, Masahiro SHIMIZU, Yoshinori IKEDA, Osamu TSUCHIYA, Kazunori FURUSAWA

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