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Table of Contents
Foreword
| FOREWORD |
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| Takao WAHO | 983-983 |
| FOREWORD |
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| Yuzo YOSHIKUNI | 1109-1109 |
Letters
| RCS Prediction Method from One-Dimensional Intensity Data in Near-Field |
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| Yoshio INASAWA, Hiroaki MIYASHITA, Yoshihiko KONISHI | 1167-1170 |
| A Partial Access Mechanism on a Register for Low-Cost Embedded Multimedia ASIP |
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| Ha-young JEONG, Min-young CHO, Won HUR, Yong-surk LEE | 1171-1174 |
Papers
| Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer |
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| Masafumi ITO, Shigeru KISHIMOTO, Fumihiko NAKAMURA, Takashi MIZUTANI | 989-993 |
| AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate |
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| Sanghyun SEO, Kaustav GHOSE, Guang Yuan ZHAO, Dimitris PAVLIDIS | 994-1000 |
| Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide |
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| Shun SUGIURA, Shigeru KISHIMOTO, Takashi MIZUTANI, Masayuki KURODA, Tetsuzo UEDA, Tsuyoshi TANAKA | 1001-1003 |
| Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress |
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| Jin-Ping AO, Yuya YAMAOKA, Masaya OKADA, Cheng-Yu HU, Yasuo OHNO | 1004-1008 |
| Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs |
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| Toshiharu MARUI, Shinich HOSHI, Masanori ITOH, Isao TAMAI, Fumihiko TODA, Hideyuki OKITA, Yoshiaki SANO, Shohei SEKI | 1009-1014 |
| Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs |
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| Keita MATSUDA, Takeshi KAWASAKI, Ken NAKATA, Takeshi IGARASHI, Seiji YAEGASSI | 1015-1019 |
| A Study on Ohmic Contact to Dry-Etched p-GaN |
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| Cheng-Yu HU, Jin-Ping AO, Masaya OKADA, Yasuo OHNO | 1020-1024 |
| A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch |
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| Koichi MAEZAWA, Ikuo SOGA, Shigeru KISHIMOTO, Takashi MIZUTANI, Kazuhiro AKAMATSU | 1025-1030 |
| RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination |
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| Makoto KASU, Kenji UEDA, Hiroyuki KAGESHIMA, Yoshiharu YAMAUCHI | 1042-1049 |
| Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements |
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| Jochen SIGMUND, Jean-Francois LAMPIN, Valentin IVANNIKOV, Cezary SYDLO, Michail FEIGINOV, Dimitris PAVLIDIS, Peter MEISSNER, Hans L. HARTNAGEL | 1058-1062 |
| Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures |
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| Hong-Quan ZHAO, Seiya KASAI, Tamotsu HASHIZUME, Nan-Jian WU | 1063-1069 |
| Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors |
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| Michihiko SUHARA, Eri UEKI, Tsugunori OKUMURA | 1070-1075 |
| Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft |
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| Norihide KASHIO, Kenji KURISHIMA, Yoshino K. FUKAI, Shoji YAMAHATA | 1084-1090 |
| Large Signal Evaluation of Nonlinear HBT Model |
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| Iltcho ANGELOV, Akira INOUE, Shinsuke WATANABE | 1091-1097 |
| High-Performance 76-GHz Planar Gunn VCO |
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| Yoshimichi FUKASAWA, Kiyoshi KAWAGUCHI, Takashi YOSHIDA, Takahiro SUGIYAMA, Atsushi NAKAGAWA | 1098-1103 |
| 1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET |
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| Fumio HARIMA, Yasunori BITO, Hidemasa TAKAHASHI, Naotaka IWATA | 1104-1108 |
| Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect |
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| Yu SHIMIZU, Sou KAWABE, Hiroya IWASAKI, Takayuki SUGIO, Kazuhiko SHIMOMURA | 1110-1116 |
| Polymeric Waveguide Optical Switch Using Rotary Drive Mechanism |
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| Toshitsugu UESUGI, Shiho ZAIZEN, Atsushi SUGITATSU, Tatsuo HATTA | 1117-1120 |
| All-Optical Phase Multiplexing from π/2-Shifted DPSK-WDM to DQPSK Using Four-Wave Mixing in Highly-Nonlinear Fiber |
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| Guo-Wei LU, Kazi Sarwar ABEDIN, Tetsuya MIYAZAKI | 1121-1128 |
| Dispersion and Splice Characteristics of Bend-Insensitive Fibers with Trench-Index Profile Compliant with G.652 |
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| Shoichiro MATSUO, Tomohiro NUNOME, Kuniharu HIMENO, Haruhiko TSUCHIYA | 1129-1135 |
| Designs and Fabrications of Photonic Crystal Fiber Couplers with Air Hole Controlled Tapers |
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| Hirohisa YOKOTA, Hiroki KAWASHIRI, Yutaka SASAKI | 1136-1141 |
| Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress |
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| Kenta YAMADA, Takashi SATO, Shuhei AMAKAWA, Noriaki NAKAYAMA, Kazuya MASU, Shigetaka KUMASHIRO | 1142-1150 |
| Design of a High-Precision DDS-Based Configurable Clock Generator |
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| Hsin-Chuan CHEN | 1151-1157 |
| Excitation Phenomena of Plasma Display Panel |
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| Teruo KURAI | 1158-1166 |
Invited Papers
| Development of High-Frequency GaN HFETs for Millimeter-Wave Applications |
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| Masataka HIGASHIWAKI, Takashi MIMURA, Toshiaki MATSUI | 984-988 |
| Current Status and Future Prospects of SiC Power JFETs and ICs |
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| Jian H. ZHAO, Kuang SHENG, Yongxi ZHANG, Ming SU | 1031-1041 |
| Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications |
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| J. Brad BOOS, Brian R. BENNETT, Nicolas A. PAPANICOLAOU, Mario G. ANCONA, James G. CHAMPLAIN, Yeong-Chang CHOU, Michael D. LANGE, Jeffrey M. YANG, Robert BASS, Doewon PARK, Ben V. SHANABROOK | 1050-1057 |
| GaAs Industry in Europe-- Technologies, Trends and New Developments |
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| Helmut JUNG, Herve BLANCK, Wolfgang BOSCH, Jim MAYOCK | 1076-1083 |